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| MOS FET 2SK3800 Absolute Maximum Ratings (Ta=25C) Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg Ratings 40 20 70 140 Unit V V A A W mJ C C Electrical Characteristics Symbol Test Conditions (Ta=25C) External Dimensions TO220S 4.440.2 min 40 Ratings typ max 10 100 4.0 6.0 Unit 80 (Tc=25C) 400 150 -40 to +150 * 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50 V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr Rth (ch-c) Rth (ch-a) VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s (1.5) ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A +0.2 0.86 -0.1 2.540.1 2.540.1 0.4 0.1 (1.3) 10.20.3 (5.4) 1 2 3 1.2 1.56 62.5 Details of the back (S=2/1) (Unit: mm) ID -- VDS Characteristics (typ.) 70 60 50 10V 5.5V 5.0V VGS = 4.5V ID -- VGS Characteristics (typ.) 70 60 VDS -- VGS Characteristics (typ.) 1.0 Re (yfs) -- ID Characteristics (typ.) 500 Tc = -55C 25C 150C (VDS = 10V) (Ta = 25C) (VDS = 10V) 0.8 50 100 0.6 0.4 ID = 70A 0.2 35A 1 0 5 10 15 20 1 ID (A) ID (A) 40 30 20 10 0 0 0.5 40 30 20 10 Ta = 150C 25C -55C Re (yfs) (S) VDS (V) 10 1.0 1.5 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 10 1.40.2 3 -0.5 +0.3 2.0 30 3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 110 V A A V S m pF pF pF ns ns ns ns V ns C/W C/W (5) (0.45) (1.4) 1.30.2 10.5 -0.5 9.10.3 +0.3 2.60.2 0.1 -0.1 +0.2 1.20.2 70 VDS (V) VGS (V) VGS (V) ID (A) RDS (ON) -- ID Characteristics (typ.) 7.0 6.0 Ta = 25C VGS = 10V RDS (ON) -- TC Characteristics (typ.) 12.0 10.0 ID = 35A VGS = 10V j-c 10 -- t Characteristics (Single pulse) Dynamic I/O Characteristics (typ.) 30 VDS (ID = 35A) 15 RDS (ON) (m) j-c (C/W) 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 RDS (ON) (m) 8.0 6.0 4.0 2.0 0 -60 -50 1 20 10 VGS VDD = 8V 12V 14V 16V 24V 0.1 10 5 0 50 100 150 0.01 0.00001 0.0001 0.001 0.01 0 0.1 1 10 100 0 50 100 0 150 ID (A) Tc (C) t (s) Qg (nC) Capacitance -- VDS Characteristics (typ.) IDR -- VSD Characteristics (typ.) 50000 Safe Operating Area (single pulse) PD -- TC Characteristics 500 100 (O N) (Ta = 25C) VGS = 0V f = 1MHz 70 60 50 (Ta = 25C) PT IT ED 90 80 70 60 =1 Capacitance (pF) PT PT 10000 Ciss LI M PT =1 =1 m 0 s =1 00 s IC (A) 40 30 20 Ta = 150C 25C -55C 10 RD PD (W) IDR (A) S 0m s s 50 40 30 1000 Coss Crss 10 1 20 10 100 0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.1 0 1 10 100 0 20 40 60 80 100 120 140 160 VDS (V) VSD (V) VDS (V) Tc (C) VGS (V) VDS (V) 111 |
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